Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts

Jacek Gryglewicz, Wojciech Macherzynski, Andrzej Stafiniak, Bogdan Paszkiewicz, Regina Paszkiewicz

Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts

Číslo: 2/2016
Periodikum: Advances in Electrical and Electronic Engineering
DOI: 10.15598/aeee.v14i2.1589

Klíčová slova: AlGaN; GaN; ohmic metallization; recess; Ti/Al/Mo/Au, Ohmická metalizace; Výřez

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Anotace: Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment. The Cl2:BCl3:Ar gas mixture was used in order to thin the top of AlGaN layer prior to deposition of Ti/Al/Mo/Au ohmic contacts. The surface morphology of AlGaN was investigated using scanning electron microscopy and atomic force microscopy. TLM measurements revealed a consequential decrease of contact resistivity.