Synthesis and Characterization of Ga2O3 and In2O3 Nanowires

Andrzej Stafiniak, Joanna Prazmowska, Ryszard Korbutowicz, Jaroslaw Serafinczuk, Regina Paszkiewicz

Synthesis and Characterization of Ga2O3 and In2O3 Nanowires

Číslo: 2/2019
Periodikum: Advances in Electrical and Electronic Engineering
DOI: 10.15598/aeee.v17i2.3356

Klíčová slova: Ga2O3; In2O3; nanowires.

Pro získání musíte mít účet v Citace PRO.

Přečíst po přihlášení

Anotace: In this work, the thermal synthesis and characterization of gallium oxide and indium oxide nanowires using vapour-liquid-solid mechanism at atmospheric pressure were described. Au nanoislands formed by the solid-state dewetting process of various thickness metal layer were applied as growth catalyst of nanowires while high-purity metal reactants (In, Ga) were applied as AIII precursors. The catalytic layer thickness influence on the morphology of investigated nanostructures was studied. Material composition and structural properties were used for crystallographic quality of AIII-oxide nanowires examination.