Qualitative Assessment of the UV Exposition Process Near the Diffraction Limits

Agnieszka Zawadzka, Kornelia Indykiewicz, Regina Paszkiewicz

Qualitative Assessment of the UV Exposition Process Near the Diffraction Limits

Číslo: 2/2020
Periodikum: Advances in Electrical and Electronic Engineering
DOI: 10.15598/aeee.v18i2.3723

Klíčová slova: UV exposition; diffraction limits; simulations

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Anotace: In the presented work the technological parameters that influence the shape of the resist structures are reported. The experimental results are compared with the simulations results, based on the solution of Maxwell’s equations using the RF module of COMSOL Multiphysics software. The electric field intensity distribution in the resist layer was analyzed for the mask slits that are larger and comparable to the applied wavelength. The differences in wave energy absorption in the resist layer are presented and discussed. For both cases, the impact of the chromium film thickness of the mask on the pattern profile of the resist is studied and the comparison is performed between the simulation and experimental results.