An Efficient MRTD Model for the Analysis of Crosstalk in CMOS-Driven Coupled Cu Interconnects

S. Rebelli, B. R. Nistala

An Efficient MRTD Model for the Analysis of Crosstalk in CMOS-Driven Coupled Cu Interconnects

Číslo: 2/2018
Periodikum: Radioengineering Journal
ISBN: 1210-2512
DOI: 10.13164/re.2018.0532

Klíčová slova: CMOS Driver, Cu interconnects, peak crosstalk noise, delay, MRTD, FDTD, HSPICE, Ovladač CMOS, Cu propojení, špičkový šum, zpoždění

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Anotace: This paper presents an efficient wavelet based numerical method for analyzing functional and dynamic crosstalk of CMOS driven coupled copper (Cu) interconnects known as Multi-Resolution Time Domain (MRTD),wherein, the CMOS drivers are modeled using nth-power law model. The performance of the proposed MRTD method is evaluated through recursive simulations in HSPICE environment and compared with the conventional Finite Difference Time Domain (FDTD) method at 32-nm technology node for global interconnects of length 1mm, where the computations of the proposed model and conventional FDTD are carried out using MATLAB. For different number of test cases, the proposed MRTD method gives an average error of 0.14 % and 1.9 % for peak crosstalk noise and peak noise timing, respectively, with respect to HSPICE results. Also, the dynamic crosstalk noise on victim line of the proposed MRTD method are in close agreement with those of HSPICE. The results show the dominance of the proposed MRTD method over the conventional FDT method regarding accuracy. The proposed MRTD method is also extended for three-mutuallycoupled interconnect lines for crosstalk analysis, with an average error less than 1 % when compared to that of more than 3 % using the conventional FDTD method. Moreover, for the transient analysis, the MRTD method is more time efficient than HSPICE.