Katarzyna Bielak, Damian Pucicki, Wojciech Dawidowski, Mikolaj Badura, Beata Sciana, Marek Tlaczala

GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications

Číslo: 3/2018
Periodikum: Advances in Electrical and Electronic Engineering
ISBN: 1804-3119
DOI: 10.15598/aeee.v16i3.2751

Klíčová slova: Dilute nitrides; multicomponent semiconductor; photodetectors; Quantum-Confined Stark Effect, Zředěné nitridy; vícesložkový polovodič; fotodetektory; Kvantově omezený efekt

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Anotace: The inhomogeneities of multicomponent semiconductor alloys, as well as phase segregation, can be utilized for enhancement of photodetector absorption properties and thus its efficiency. In this paper, the influence of external electric field on the probability of light absorption in the GaInNAs quantum well is discussed. Both phenomenon: indium and nitrogen composition gradient as well as step-like quantum well are applied to design the QW with compensation of the Quantum-Confined Stark Effect (QCSE) Parasitic effect of QCSE results from decrease of the wave functions overlapping in the QWs placed in reverse biased junction, which finally decrease the efficiency of the photodetector.